Language
HYG090N06LS1C2
The N-channel MOSFET in PDFN5*6 package features VDS?60 V and RDS(on)?7.7 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as AC-DC synchronous?rectification, high-frequency DC-DC converter and other application fields.
Features
Low RDS(on)
Low FOM
Low input Capacitance
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Advanced Technology
Benefits
Low conduction losses
High switching frequency
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Lower drive loss
E-Installation
Applications
AC-DC/DC-DC Switched-mode Power Supplies
Power Delivery
Synchronous Rectification
LED applications
